High voltage breakover diode having comparable forward breakover and reverse breakdown voltages

ABSTRACT

In a first embodiment, an ultra-fast breakover diode has a turn on time T ON  that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In a second embodiment, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. In a third embodiment, a string of series-connected breakover diode dice is provided, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.

TECHNICAL FIELD

The described embodiments relate to breakover diodes and to relatedstructures and methods.

BACKGROUND INFORMATION

FIG. 1 (Prior Art) is a symbol of a thyristor 1. A conventionalthyristor is a three terminal semiconductor device that has four layersof alternating N type material and P type material. FIG. 2 (Prior Art)shows an example in which the thyristor device 1 has an P-N-P-Nstructure. A cathode electrode 2 is coupled to the N type material onone side of the device and an anode electrode 3 is coupled to the P typematerial on the other side of the device. A gate electrode 4 is coupledto the P type layer closest to the cathode. The structure has three PNjunctions, serially named J1, J2, and J3, from the anode electrode sideof the device. Operation of the thyristor device is explained in termsof a pair of tightly coupled bipolar junction transistors, arranged in aself-latching way, as illustrated in FIG. 3 (Prior Art). One bipolartransistor 5 is an NPN transistor whose N type emitter is coupled to thecathode electrode. The other bipolar transistor 6 is a PNP transistorwhose P type emitter is coupled to the anode electrode. The thyristor isconsidered to operate in one of three modes: 1) in a reverse blockingmode, 2) in a forward blocking mode, and 3) in a forward conductingmode.

If the cathode electrode has a positive voltage with respect to theanode electrode, then no current flows from cathode to anode becauseeither the J3 junction and/or the J1 junction is reverse biased. Thesetwo PN junctions can be thought of as a series connected pair of diodesthat are reverse biased. This is referred to as the reverse blockingmode. Supplying a triggering pulse into the gate has no effect.

If the anode has a positive voltage with respect to the cathode, but novoltage is applied to the gate electrode with respect to the cathodeelectrode, then the J1 and J3 junctions are forward biased, while the J2junction is reverse biased. Due to the J2 junction being reverse biased,there is no conduction and the thyristor is off. This is referred to asthe forward blocking mode. The anode-to-cathode voltage is applied in adirection that could cause conduction were there to be current flowacross the J2 junction, but the thyristor has not been triggered. Atsome voltage, the electric field at the J2 junction grows so strong thatthe J2 junction starts to breakdown and a small amount of avalanchecurrent begins to flow, but the amount of current is not adequate toturn on transistor 5.

If the anode-to-cathode voltage is increased beyond the forwardbreakdown voltage V_((BO)F) of the thyristor, then the magnitude of theavalanche current reaches a triggering current, which causes transistor5 to turn on, and causes the thyristor to start conducting. This isreferred to as the forward conduction mode.

If a positive voltage is applied to the gate electrode with respect tothe cathode electrode, then the onset of this avalanche breakdown of theJ2 junction occurs at a lower (but still positive) anode-to-cathodevoltage. The anode-to-cathode voltage at which the thyristor turns on istherefore dependent upon the gate voltage (gate-to-cathode voltage).This positive gate voltage that causes the thyristor to turn on (due toavalanche breakdown of the J2 junction) can be caused by injecting amomentary current pulse 7 into the gate electrode 4. Whether thetriggering on is said to occur due to the gate voltage pulse or due tothe current of the pulse, the triggering effect of triggering thethyristor on is the same in that avalanche breakdown of the J2 junctionis started.

Once avalanche breakdown of the J2 junction has occurred and thethyristor is on and conducting current from the anode to the cathode,the thyristor remains latched in this on state and the thyristorcontinues to conduct, irrespective of changes in the gate voltage, untileither the anode is no longer forward biased with respect to thecathode, or until the current through the thyristor (anode to cathode)is less than a holding current I_(H). Once the thyristor has beentriggered, removing the triggering current does not turn off thethyristor. If the anode is positively biased with respect to thecathode, then the thyristor cannot be turned off unless the anodecurrent falls below the holding current I_(H). The thyristor can,however, be switched off if an external circuit momentarily causes theanode to be negatively biased with respect to the cathode.

Very large and expensive thyristors are used to switch high voltages inhigh power applications. Due to the limited maximum forward voltage drop(anode to cathode) that can be put across a thyristor before it conductstoo much current and fails, many thyristors are typically assembledtogether in series in what is referred to as a stack. Each thyristor ofthe stack therefore only has to handle part of the overall high forwardvoltage drop across the stack. By controlling the gate voltages of theindividual thyristors in the stack, the stack can be made to operate asa single high voltage and high power switch that either conducts fromone end of the stack to the other, or that does not conduct. Thyristorstacks are, for example, used in megawatt scale AC-to-DC and DC-to-ACpower conversion, such as for example where the high DC voltage is avoltage on a high voltage DC power transmission line. If the magnitudeof the high voltage DC were to momentarily pulse high, such as due tothe power line being struck by lightning, then an intolerably hightransient voltage might be momentarily placed across the thyristor stack(the anode voltage is at too high a positive voltage with respect to thecathode), causing excessive current flow through the stack if thethyristors were on, and causing localized overheating and failure of thestack. To avoid this, and to protect the thyristors of the stack fromsuch a transient overvoltage condition, an overvoltage protection devicereferred to as a BOD (Break Over Diode) device is used. BOD devices arecoupled to the thyristors of the stack in such a way that the BODdevices turns on the thyristors before excessive over voltage across thethyristors can damage the thyristors. The BOD overvoltage protectiondevice detects the high voltage condition and turns on, thereby causinga gate current to flow into the gate of each thyristor, and therebyturning on the thyristor.

A BOD diode is a thyristor whose gate electrode is not brought out ofthe device for external connection. The BOD diode has an anode electrodeand a cathode electrode, but the gate electrode of the device is notbrought out. The BOD diode is not triggered on by an externally appliedpulse of gate current as described above in the case of a conventionalthyristor, but rather the BOD diode is triggered on by the onset ofavalanche current that is generated within the BOD device itself.Operation of the BOD diode is therefore explained using the terminologyemployed above in connection with the self-latching bipolar transistorstructure of FIG. 3. In a forward blocking mode, as the anode-to-cathodevoltage increases to the V_((BO)F), the J1 and J3 junctions are forwardbiased but the J2 junction is reversed biased. A depletion region formsat this reverse biased J2 junction, and the resulting separation ofcharge at the junction gives rise to a localized electric field. Thestrength of the electric field grows to the point that covalent bonds ofthe material at the J2 junction are broken, and an avalanche currentflows, with generated electrons being pulled to the relative positivepotential of the anode, and with generated holes being pulled theopposite direction to the relative negative potential of the cathode.The hole flow through the P type layer between J2 and J3 results in avoltage drop across the material of the P type layer. If the avalanchecurrent is of adequate magnitude, then the voltage drop exceeds 0.7volts, resulting in the base-to-emitter voltage of the NPN transistor 5(see FIG. 3) exceeding 0.7 volts. This causes the NPN transistor 5 toturn on. The NPN transistor 5 turning on pulls a base current out of thebase of the PNP transistor 6. PNP transistor 6 turns on, and suppliescurrent from its collector into the base of the NPN transistor 5. Thetwo transistors are therefore latched on in a self-latching way, witheach one supplying a base current to the other. Once the BOD diode hastriggered itself on in this way, it will remain on unless either theanode is no longer forward biased with respect to the cathode, or untilthe current through the BOD diode falls below the holding current I_(H).

In an overvoltage protection application, the BOD diode is coupled inparallel with a power thyristor of a stack, such that if an excessiveforward voltage develops across the power thyristor, then the BOD diodeundergoes breakover and turns on, thereby conducting a current. Thiscurrent is supplied as a triggering pulse to the thyristor, so that thethyristor is turned on. Accordingly, when the forward voltage across thethyristor reaches an adequately high voltage, the breakover diodesupplies a triggering current to the thyristor and causes the thyristorto turn on. When the thyristor turns on, the forward voltage drop acrossthe thyristor decreases. The thyristor is therefore protected from anover voltage condition.

FIG. 4 (Prior Art) is a cross-sectional diagram of a conventional bulkBOD diode 8. The PNPN thyristor structure is evident. Whereas the anodeelectrode 3 of the PNPN structure of FIG. 2 is illustrated on the top,the anode electrode 9 of the BOD diode of FIG. 4 is illustrated on thebottom. The P type substrate layer 10 is the first P type thyristorlayer, the N− type substrate layer 11 is the second N type thyristorlayer, the P type base region 12 is the third P type thyristor layer,and the N+ type region 13 is the fourth N type thyristor layer. Layers10 and 11 are both of substrate silicon, so the BOD is referred to hereas a “bulk” BOD. Reference numeral 14 identifies the cathode electrode.The BOD device has guard rings 15 and 16, and a peripheral shallowchannel stopper 17.

FIG. 5 (Prior Art) is a diagram that shows the electric field along lineA-A′ in FIG. 4 just before the onset of avalanche breakdown. The peak ofthe electric field is at the J2 PN junction. The J2 PN junction isbetween the N− type base layer 11 and the P type base region 12. Whenthe electric field strength at this point is high enough, then theavalanche current begins to flow. If the magnitude of current flow fromthe junction laterally under the emitter region 13 across the resistanceof the P type material of region 12 and to the cathode electrode 14 isadequately high, then the resulting voltage drop will reach 0.7 volts.This 0.7 volt drop amounts to a 0.7 base-to-emitter voltage on the NPNtransistor, so the thyristor will be triggered on as described above.

FIG. 6 (Prior Art) is a diagram that shows the turning on of the BODdevice 8 of FIG. 4. The BOD device has 8 has a reverse breakdown voltageof −200 volts to −300 volts. In the forward voltage condition, the solidline 18 in FIG. 6 represents current flow through the BOD device fromanode to cathode. The dashed line 19 is the anode-to-cathode voltageacross the BOD device. As can be seen, the BOD device begins to conductappreciable current at a forward anode-to-cathode breakover voltageV_((BO)F) of about +450 volts. This is the time when the avalanchecurrent in the BOD device has reached the triggering current. Thereafterthe current increases and the voltage across the BOD device decreases.At time 0.6 microseconds the anode-to-cathode voltage across the BODdevice has decreased to zero volts. The turn on time (T_(ON)) is thetime from the time when the internal triggering current is reached attime 0.1 microseconds until the time when the anode-to-cathode voltagereaches zero volts. The turn on time (T_(ON)) is therefore 0.5microseconds. Because a high transient overvoltage condition can cause apower thyristor of a stack to be destroyed in a short amount of time, afast turn on BOD is desired for its thyristor-protection function.

SUMMARY

In a first novel aspect, an ultra-fast breakover diode has a turn ontime T_(ON) of less than 0.3 microseconds, a breakover voltage greaterthan +400 volts, and the breakover voltage varies less than one percentper ten degree Celsius change. The breakover voltage is also repeatableover changes in semiconductor manufacturing process. In one example, ananode metal electrode is disposed on a bottom surface of a P type layerof substrate semiconductor material, and an N type buffer layer ofepitaxial semiconductor material is disposed on the P type layer. The Ntype buffer layer has an N type dopant concentration between 1×10¹⁵atoms/cm³ and 1×10¹⁶ atoms/cm³. A thin layer of N− type base layer ofepitaxial semiconductor material is disposed on the N type buffer layer.This thin layer is less than 130 microns thick. A P type base regionextends from a semiconductor surface down into the thin N− type baselayer to a depth D. The P type base region has a peripheral edge at thesemiconductor surface, and the peripheral edge has a minimum radius ofcurvature R that is at least twice the depth D. An N+ type annularemitter region extends down from the semiconductor surface down into theP type base region such that material of the P type base region extendsup to the semiconductor surface in the center of the N+ annular regionand defines a cathode short region of P type semiconductor material. Thecathode short region has a width at the semiconductor surface that isless than 0.250 millimeters. A cathode metal electrode is disposed overpart of the annular N+ type emitter and over the cathode short region atthe semiconductor surface. A floating metal ring is disposed on the Ptype base region.

In a second novel aspect, a high voltage breakover diode has comparableforward breakover and reverse breakdown voltages. In one example, ananode metal electrode is disposed on a bottom semiconductor surface of aP type layer of substrate semiconductor material. An N− type base layeris disposed on the P type layer, and a P type base region extends froman upper semiconductor surface down into the N− type base layer. An N+type annular emitter region extends down from the upper semiconductorsurface into the P type base region. P type material of the P type baseregion extends up to the semiconductor surface in the center of theannular emitter region and defines a cathode short region. A P typeisolation diffusion region extends from the upper semiconductor surfaceto the bottom semiconductor surface, and the P type isolation diffusionregion surrounds the N− type base layer in the lateral dimension so thatthe P type isolation diffusion contacts each of four side edges of thedie of breakover diode device. A cathode metal electrode is disposedover part of the annular N+ type emitter and over the cathode shortregion at the upper semiconductor surface. The breakover diode devicehas a forward breakover voltage (V_((BO)F)) that is greater than fourhundred volts. The breakover diode device is also able to withstand areverse voltage whose absolute value is in excess of the forwardbreakover voltage without suffering breakdown.

In a third novel aspect, a packaged overvoltage protection circuitincludes a plurality of identical breakover diode dice, and a pluralityof resistors. The plurality of breakover diode dice are coupled togetherin series between a first package terminal and a second packageterminal. The plurality of resistors are coupled together in a resistorstring, such that one resistor is in parallel with each of the pluralityof breakover diode dice. The plurality of breakover diode dice and theplurality of resistors are enclosed in a package housing from which thefirst and second package terminals extend. Each of the breakover diodeshas a reverse breakdown voltage that is greater in absolute magnitudethan the forward breakover voltage of the breakover diode, and theforward breakover voltage is at least 400 volts. Of importance, thepackaged overvoltage protection circuit need contain no expensiveseparate discrete diode with a high reverse breakdown capability. Theonly semiconductor components of the packaged overvoltage protectioncircuit are the plurality of breakover diode dice. Accordingly, thepackage housing encloses no semiconductor die that comprises anycomponent other than a breakover diode.

In one application, the packaged overvoltage protection circuit isusable to supply a triggering current to the gate of a thyristor. If thevoltage between the anode and the cathode of the thyristor exceeds afirst positive voltage, then the breakover diodes in the packagedovervoltage protection circuit will undergo breakover such that atriggering current is supplied from the packaged overvoltage protectioncircuit and into the gate of the thyristor. The triggering current turnsthe thyristor on, and the thyristor conducts a large current to reducethe voltage across the thyristor between the anode and cathode to beless than the first positive voltage. A large negative voltage betweenthe gate of the thyristor and the anode of the thyristor will not damagethe packaged overvoltage protection circuit because the packagedovervoltage protection circuit can withstand a reverse voltage of asecond voltage. The second voltage is a large negative voltage that hasan absolute value that is greater than the first positive voltage. Thenumber of breakover diode dice in series can be increased to increasethe first and second voltages. In one example, the first voltage is+8000 volts, and the second voltage is −10,000 volts.

In one example, a snubber circuit is provided between the gate andcathode of the thyristor to soften ill effects of switching voltagespikes on the packaged overvoltage protection circuit. A currentlimiting resistor is placed in series with the packaged overvoltageprotection circuit between the thyristor anode and the thyristor gate tolimit the magnitude of the triggering current. A second identicalcircuit (packaged overvoltage protection circuit, thyristor, currentlimiting resistor, and snubber circuit) is provided in parallel with thefirst circuit to protect against large negative voltages that are morenegative than −8000 volts.

Further details and embodiments and techniques are described in thedetailed description below. This summary does not purport to define theinvention. The invention is defined by the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, where like numerals indicate like components,illustrate embodiments of the invention.

FIG. 1 (Prior Art) is a diagram of a thyristor symbol.

FIG. 2 (Prior Art) is a simplified diagram of the structure of athyristor.

FIG. 3 (Prior Art) is a simplified circuit diagram of a thyristor.

FIG. 4 (Prior Art) is a cross-sectional diagram of a bulk breakoverdiode device.

FIG. 5 (Prior Art) is a diagram that illustrates the electric fieldalong sectional line A-A′ in FIG. 4.

FIG. 6 (Prior Art) is a waveform diagram that shows the turn on timeT_(ON) of the bulk BOD device of FIG. 4.

FIG. 7 is a simplified cross-sectional diagram of a breakover diode(BOD) die in accordance with a first novel aspect.

FIG. 8 is a diagram of a package that contains the BOD die of FIG. 7.

FIG. 9 is a schematic diagram of the package of FIG. 8.

FIG. 10 is a top-down diagram of the BOD die of FIG. 7.

FIG. 11 is a view of the bottom of the BOD die of FIG. 7.

FIG. 12 is a circuit diagram of a test circuits used to exercise the BODdie of FIG. 7.

FIG. 13 is a waveform diagram that shows the turn on time TON of the BODdie of FIG. 7.

FIG. 14 is a diagram that illustrates the electric field along sectionalline B-B′ in FIG. 7.

FIG. 15 is a diagram that illustrates a depletion region in the BOD dieof FIG. 7 just before avalanche breakdown.

FIG. 16 is a diagram that shows BOD devices having different turn ontimes being manufactured as parts of the same wafer.

FIG. 17 is a diagram showing how the forward breakover voltage of theBOD die of FIG. 7 varies less than one percent per ten degree Celsiuschange in temperature.

FIG. 18 is a diagram showing the V-I characteristic of the BOD die ofFIG. 7.

FIG. 19 is a diagram of a thyristor protection circuit that involves theBOD die of FIG. 7.

FIG. 20 is a table that sets forth aspects of the composition of variousparts of the BOD die of FIG. 7.

FIG. 21 is a table that shows how the turn on time of a device of thearchitecture of the BOD die of FIG. 7 can be adjusted.

FIG. 22 is a cross-sectional diagram of a BOD device in accordance witha second novel aspect.

FIG. 23 is a diagram of a package that contains the breakover diodedevice of FIG. 22.

FIG. 24 is a schematic diagram of the package of FIG. 23.

FIG. 25 is a top-down diagram of the BOD device of FIG. 22.

FIG. 26 is a diagram of the bottom of the BOD device of FIG. 22.

FIG. 27 is a cross-sectional diagram of the BOD device of FIG. 22showing the J1 depletion region for a reverse voltage of about −300volts.

FIG. 28 is cross-sectional diagram of the BOD device of FIG. 22 showingthe J1 depletion region for a reverse voltage of about −500 volts.

FIG. 29 is a diagram that shows the turn on time TON of the BOD deviceof FIG. 22, when the BOD device is tested in the test circuit of FIG.12.

FIG. 30 is a diagram that shows the V-I characteristic of the BOD deviceof FIG. 22.

FIG. 31 is a table that sets forth aspects of the composition of variousparts of the BOD device of FIG. 22.

FIG. 32 is a diagram of a packaged overvoltage protection circuit inaccordance with a third novel aspect.

FIG. 33 is a circuit diagram of the packaged overvoltage protectioncircuit of FIG. 32 in use with a thyristor, a current limiting resistor,and a snubber.

DETAILED DESCRIPTION

Reference will now be made in detail to background examples and someembodiments of the invention, examples of which are illustrated in theaccompanying drawings. In the description and claims below, when a firstobject is referred to as being disposed “over” or “on” a second object,it is to be understood that the first object can be directly on thesecond object, or an intervening object may be present between the firstand second objects. Similarly, terms such as “upper”, “top”, “up”,“down”, and “bottom” are used herein to describe relative orientationsbetween different parts of the structure being described, and it is tobe understood that the overall structure being described can actually beoriented in any way in three-dimensional space. The notations N+, N−, N,P+, and P are only relative, and are to be considered in context, and donot denote any particular dopant concentration range.

FIG. 7 is a cross-sectional diagram of a breakover diode (BOD) device 20in accordance with one novel aspect. A metal anode electrode 21 isdisposed on the bottom surface of a layer of P type substratesemiconductor material 22. An N type buffer layer 23 of epitaxialsemiconductor material is disposed on the P type substrate layer 22. Theepitaxial layer is grown on the substrate using known processes. An N−type base layer 24 of epitaxial semiconductor material is disposed onthe N type buffer layer 23. The N−type base layer 24 is more lightlydoped with N type dopants than is the N type buffer layer 23. The N−type layer 24 extends up to an upper semiconductor surface 25 of the diestructure. The bottom semiconductor surface 26 of the die structure isidentified by reference numeral 26. In the illustrated example, the twosurfaces 25 and 26 are substantially planar. A P type base region 27extends down into the N− type base layer 24 from the upper semiconductorsurface 25. An N+ type annular emitter region 28 extends down into the Ptype base region 27 from the upper semiconductor surface 25 as shown.The region 28 is annular in that it has a ring-shape when consideredfrom the top-down perspective. An amount of the P type material of the Ptype base region 27 extends up in the center of this annular structureso that the P type material reaches the upper semiconductor surface 25.This amount of P type material is referred to as the “cathode shortregion” 29. Cathode short region 29 has a width W at the uppersemiconductor surface 25. A metal cathode electrode 30 is disposed onthe upper semiconductor surface 25 so that it makes contact with the N+type annular emitter region 28 and with the cathode short region 29 atthe upper semiconductor surface 25 as shown.

A floating metal ring 31 is disposed on the upper surface of the P typebase region 27 so that the floating metal ring 31 surrounds, but doesnot touch, the metal cathode electrode 30. The floating metal ring 31 is“floating” in the sense that it is not electrically coupled to thecathode metal electrode 30. The floating metal ring 31 does not extendover any portion of the N− type base layer at the surface 25, nor doesit extend over any portion of the annular N+ type emitter region 28 atthe surface 25. The floating metal ring 31 is only in contact with the Ptype base region 27. In addition, the BOD device 20 includes twoconcentric P+ type guard rings 32 and 33. P+ type guard ring 32surrounds the P type base region 27, and P+ type guard ring 33 surroundsthe P+ type guard ring 32. In addition, the BOD device 20 includes an N+type channel stopper ring 34.

FIG. 8 is a side view of a packaged BOD device 40. A BOD die of the typeillustrated in FIG. 7 is enclosed in the plastic housing portion 41 thepackage of FIG. 40. The anode metal electrode 21 of the die is coupledto metal package terminal PT2 42. The cathode metal electrode 30 of thedie is coupled to metal package terminal PT1 43.

FIG. 9 is a schematic diagram of the packaged BOD device 40 of FIG. 8.The connections 44 and 45 are internal to the package.

FIG. 10 is a diagram of the top surface of BOD die 20. The cathode metalelectrode 30 has a square shape when viewed from the top-downperspective, except that the corners of the square are rounded. Theperipheral edge of the P type base region 27 (when viewed from thetop-down perspective) has a minimum radius of curvature of radius R.Similarly, the minimum radius of curvature R′ of the floating metal ring31 is approximately R. From the top-down perspective, the strip-likeshape of the floating metal ring 31 follows along the peripheralboundary of the P type base region 27.

FIG. 11 is a diagram of the bottom surface of BOD die 20. Substantiallythe entire bottom surface of the BOD die is covered in metal of theanode metal electrode 21.

FIG. 12 is a schematic diagram of a test circuit. The high voltage DCsupply 46 is isolated from the BOD device 20 by 5 k ohm resistor 47,capacitor 48, and inductor 49. The values are capacitor 48 and inductor49 are selected depending on the pulse width and peak current desired. A1800V antiparallel diode 50 is disposed in parallel with BOD device 20in order to protect the BOD device 20 from any large negative transientvoltages that might occur as a consequence of the switching. If anegative transient voltage where to develop across the BOD device 20,then diode 50 would conduct and limit the magnitude of this negativevoltage across the BOD device. A Pearson transformer 51 is provided todetect and measure current 52 that might be flowing. In operation, theswitch 53 is closed so that the DC voltage charges the capacitor 48through the resistor 47. The voltage on capacitor 48 increases until theV_((BO)F) of the BOD device 20 is reached. The BOD device 20 is thentriggered on, and current 52 begins to flow. This current 52 is measuredvia the Pearson transformer 51. Due to the current flow 52, thecapacitor 48 is discharged through the inductance of inductor 49.

FIG. 13 is a waveform diagram showing the voltage across the BOD device20 and the current flow 52 through the BOD device 20. The BOD device 20of FIG. 7 has a reverse breakdown voltage of −20 volts. The dashed line54 in FIG. 13 represents the voltage across the BOD device 20. Solidline 55 shows the current 52 flowing through the BOD device 20. Thevoltage across the BOD device 20 increases until the avalanche currentreaches the internal triggering current of the BOD device 20, at whichtime the voltage across the BOD device 20 is V_((BO)F) at time 0.2microseconds. The BOD device 20 then undergoes breakover, and currentflow through the BOD device 20 rises quickly. Accordingly, the voltageacross the BOD device 20 decreases quickly. The voltage across the BODdevice 20 reaches zero volts by time 0.5 microseconds. The turn on timeT_(ON) is the time from the time when the avalanche current reaches thetriggering current until the time when the voltage across the BOD devicehas decreased to zero volts. The turn on time T_(ON) is therefore 0.3microseconds. The subsequent part of the voltage and current waveformsinvolve ringing and transients that are not important for theconsiderations here. As compared to the 0.5 microsecond turn on timeT_(ON) of the prior art BOD device of FIG. 4, the 0.3 microsecond turnon time T_(ON) of the BOD device of FIG. 7 is considerably smaller.

In one advantageous aspect, the BOD device 20 of FIG. 7 has a reducedturn on time T_(ON). This is accomplished by recognizing that the delayin turn on in the prior art structure of FIG. 4 is mainly due to slowdiffusion of charge carriers through the neutral part of the N− typelayer 11. When avalanche occurs at the PN junction between P base region12 and N− type layer 11, time is required for the charge carriers topass through the structure and to reach the electrodes. In the novel BODdevice 20 of FIG. 7, the thickness of the N− base layer 24 is reduced tobe less than 130 microns, as compared to the thicker N− type layer 11 ofthe prior art structure of FIG. 4. This reduces the distance the chargecarriers have to traverse in a turn on event. The forward blockingvoltage of the BOD device, however, is limited by the onset ofpunch-through. If, under a reverse bias situation, the depletion regionat the PN junction between the P type base 12 and the N− type materialof layer 11 were to expand so far that it were to reach the top of the Ptype layer 10, then punch through would occur. At this point the devicewould breakdown. Accordingly, in the conventional design of FIG. 4 theN− type layer 11 is made thick enough so that under the high voltageforward voltages that the BOD device is to be able to withstand, thedepletion region does not reach the P type layer 10. In the novel deviceof FIG. 7, on the other hand, the N− type layer 24 is made thinner andpunch through is prevented by providing an extra more heavily doped Ntype buffer layer 23. Due to the low doping concentration in the N− typelayer 24, the depletion region grows relative quickly through this layeras the forward voltage across the BOD device increases, but when thedepletion region reaches the more highly doped N type buffer layer 23the depletion region expands downward much more slowly with furtherincreases in the forward voltage. The doping concentration of the N typebuffer layer 23 is chosen to be high enough that the depletion layer iseffectively stopped and does not penetrate deeper than ten microns inthe N type buffer layer 23 at the time the breakover voltage is reached.This defines the lower limit for the N type dopant concentration in thebuffer layer to be approximately 1×10¹⁵ atoms/cm³. On the other hand,too high an N type dopant concentration in the buffer layer would reducethe injection efficiency of the P type emitter of the PNP transistor.The P type substrate layer 22 is the emitter of this PNP transistor. Ifthe injection efficiency of the emitter of the PNP transistor isreduced, then the turn on speed will be reduced. This defines the upperlimit for the N type dopant concentration in the N type buffer layer 23to be approximately 1×10¹⁷ atoms/cm³. The preferred range for N typedopants in the N type buffer layer 23 is 1×10¹⁵ atoms/cm³ to 1×10¹⁶atoms/cm³. The thickness of the N type buffer layer 23 should be assmall as possible, while still preventing the depletion region frompenetrating through the N type buffer layer. This results in a thicknessof the N type buffer layer 23 of approximately 15 microns to 25 microns.

FIG. 14 is a diagram that shows the strength of the electric field alongsectional line B-B′ in the structure of FIG. 7. The highest electricfield strength is at the PN junction between the P type base region 27and the N− type base layer 24. From this high electric field strength,the electric field decreases at a relatively lower rate (as compared tothe rate of decrease of the electric field in FIG. 5) through thelightly doped N− type base layer 24. The depletion layer extends all theway through the N− type base layer 24, and into the more highly doped Ntype buffer layer 23. Accordingly, the magnitude of the electric fielddecreases at a relatively higher rate into the N− type buffer layer 24.The depletion region ends about half way into the N type buffer layer23, well before the P type substrate is reached.

FIG. 15 is a cross-sectional diagram that shows the contour of the outerextent of the depletion region. In the diagram, as the forward voltageacross the BOD device increases, the depletion region expands from theJN junction (the PN junction between P type region 17 and N− base layer24) downward and to the right. Dashed line 56 indicates the outer extentof the depletion region at a point in time before avalanche breakdownoccurs. Dashed line 57 indicates the outer extent of the depletionregion at a later point in time when there is a greater forward voltageacross the BOD device. The depletion region has extended into the upperpart of the N type buffer layer 23. The P+ type guard rings affect andshape the contour of the boundary of the depletion region so that it hasa relatively smooth shape when considered in three-dimensional space.The N+ type channel stopper ring 34 stops the depletion region fromextending laterally out to the side walls of the die.

The maximum possible electric field occurs at the PN junction, at thepoint of highest curvature in the junction. This region is indicated inFIG. 15 by reference numeral 58. In the case of the BOD device 20 thathas a very short turn on time TON of 0.3 microseconds, the triggering onof the device due to avalanche breakdown has to occur quickly, and thereis not adequate time for the current conducting area of breakdown tospread over the whole emitter area. Current flow is restricted to asmall area around the point where avalanche breakdown was triggered. Ina conventional design, such triggering would occur at four points in thebottom corners of the P type base region. The P type base regionconventionally has corners when considered from the top-downperspective, and the bottom corners are the corner PN junction at thebottom of the P type base region in these four corner areas. Inaccordance with one novel aspect, the turn on time T_(ON) of the BODdevice 20 is small in part due to increasing the minimum radius ofcurvature R (see FIG. 10) of the P type base region. The minimum radiusof curvature R is the radius of curvature illustrated in FIG. 10. In oneexample, the minimum radius of curvature R is at least twice the depth D59 of the N− type base layer 24, and is preferably four times the depthD of the N− type base layer 24. The region 58 where avalanche istriggered is therefore closer to a ring than it is to four separatepoints as in the prior art.

Floating metal ring 31 also facilitates uniform triggering of avalanchebreakdown. Empirically it has been found that providing the floatingmetal ring 31 reduces T_(ON). Floating metal ring 31 is thought toassist in the making the onset of avalanche more uniform due toequalizing of what might otherwise be local peaks in the electric fieldin the semiconductor material below the ring.

In addition to facilitating fast turn on by reducing carrier lifetime inthe N− type base layer, and in addition to facilitating fast turn on bypromoting uniform and distributed avalanche triggering, fast turn on isfurther facilitated by reducing the amount of avalanche current thatcauses the NPN transistor to turn on. If charge carriers are generatedin region 58 in FIG. 15, then holes will move from this region laterallyto the left through the P type base region 27, passing under the N+annular emitter region 28, and to the cathode short region 29, and up tothe cathode metal electrode 30. Reducing the width of the cathode shortregion 29, which may result in an increase in the resistance of thecurrent path at this point, is seen to reduce the triggering currentrequired to achieve the requisite 0.7 volt drop to turn on the NPNtransistor. In one example, the width of the cathode short region is0.125 millimeters, and the amount of avalanche current required toachieve turn on (the triggering current) is about 10 milliamperes, andthe turn on time is 0.3 microseconds or less.

FIG. 16 is a diagram of a wafer 60 of BOD devices being manufactured,where different ones of the BOD devices are fabricated to have differenttriggering currents due to the BOD devices having different cathodeshort region widths. The BOD devices at this point in the semiconductormanufacturing process before wafer dicing are oriented in row andcolumns on the wafer. The upper part 61 of the diagram of FIG. 16 is ablowup cross-sectional view of a first BOD device 62. The lower part 63of the diagram of FIG. 16 is a blowup cross-sectional view of a secondBOD device 64. The width W1 of the cathode short region of BOD device 62is wider than is the width W2 of the cathode short region of BOD device64. In this way, a single wafer can yield BOD devices having a range oftriggering currents.

In addition to the novel BOD device 20 of FIG. 7 having a small turn ontime, and a small triggering current, the design of the BOD device 20also results in reduced variability of the forward breakover voltageover temperature, and over process. Conventionally, variation in theforward breakover voltages of BOD devices (that ideally should have thesame breakover voltage) over temperature is two percent per ten degreesCelsius, or more. Moreover, one BOD device manufactured using a designand process may have a forward breakover voltage that variesconsiderably from the forward breakover voltage of another BOD devicemanufactured on the same wafer using the same design and process. Thisvariation in the forward breakover voltage is undesirable.

FIG. 17 is a simplified diagram that illustrates BOD forward breakovervoltage versus temperature. Line 65 shows how the forward breakovervoltage of the prior art BOD diode of FIG. 4 changes at about twopercent per ten degree Celsius change in temperature. Line 66 shows howthe forward breakover voltage of the novel BOD diode 20 of FIG. 7changes with temperature. Advantageously, the forward breakover voltagechanges less than one percent per ten degree Celsius change intemperature.

In a conventional BOD device where the N− type layer 11 is thick, andwhere the depletion region expands downward a greater distance, theshape of the bottom extent of the depletion region is not perfectlyplanar. Variations in the doping concentration of the N− type layer 11affect the breakover voltage, and variations of ten percent in dopantconcentrations is typical. In the novel BOD device 20 of FIG. 7, on theother hand, the entire N− type layer 24 typically depletes prior tobreakover. The bottom surface of N− type layer 24 is quite planar.Further expansion of the depletion region extends into the top of the Ntype buffer layer 23, but this buffer layer has a much higher N typedopant concentration so the depletion region does not extend far intothe buffer layer. The bottom extent of the depletion region is thereforequite planar and uniform. As compared to difficulties in controlling theN type dopant concentration in the N type layer 11 of the prior artstructure, it is easier to control the thickness of the N− type baselayer 24 in the BOD device of FIG. 7. Due to the improved uniformity andrepeatability in the way the depletion region grows in devices madeusing the structure of FIG. 7, the forward breakover voltages of devicesmade using the structure of FIG. 7 are more uniform and repeatable. Theforward breakover voltage of a particular BOD device is less affected bychanges in temperature as shown in the diagram of FIG. 17.

FIG. 18 is a diagram that shows the V-I characteristic of the BOD device20 of FIG. 17. In a simplified explanation, as the forward voltage (thevoltage from terminal T2 to terminal T1) increases, the current remainsvery close to zero and the BOD device is in the forward blocking mode.At some high forward voltage, avalanche breakdown begins to occur, butthe current flow is not equal to the triggering current. When thevoltage reaches the forward breakover voltage V_((BO)F), then theavalanche current reaches the triggering current, and then breakoveroccurs and the BOD device turns on. The voltage across the BOD devicetherefore quickly falls to a low voltage V_(H). Once the BOD device ison, an increase in the voltage across the BOD device results in a rapidincrease in current. The BOD device is effectively a short. The BODdevice will remain in this forward conductive mode unless the currentflow through the BOD device falls below the holding current I_(H). TheBOD device is not able to tolerate reverse voltages well, so there is novoltage to current relationship shown for negative voltages.

FIG. 19 is a diagram of an overvoltage protection circuit. Two suchcircuits may be provided in antiparallel fashion as a crowbar to protecta piece of equipment (not shown) from voltages more positive than +2000Vand from voltages more negative than −2000V. With respect to the +2000Vprotection circuit, if the positive voltage between node 67 and node 68grows adequately large, then the large positive voltage will effectivelybe present across packaged BOD device 40. When the voltage reaches theforward breakover voltage of the BOD device, the BOD device breaks overand turns on. The resulting current, which is limited by resistor 70,then flows from node 67, through the resistor 70, through a reversediode 71, through the packaged BOD device 40, and into the gate terminalG of the thyristor 69. This gate current triggers the thyristor 69 on.As a result of the triggering current flowing into the gate of thyristor69, thyristor 69 turns on and conducts a large amount of current fromnode 67 to node 68, thereby reducing the voltage between nodes 67 and68, and thereby protecting the equipment from overvoltage. The BODdevice cannot tolerate large negative voltages (for example, cannottolerate a negative voltage greater than −20V), so the reverse diode 71is provided to block current from flowing upward through the BOD devicefrom terminal PT1 to PT2 during large negative voltage situations. Inaddition, the thyristor can turn off rapidly. When the thyristor turnsoff it can generate voltage spikes (voltage spikes between the thyristorcathode and the thyristor gate). The RC circuit of resistor 72 andcapacitor 73 is a snubber circuit. The snubber circuit is provided tosoften the effect of the self-induced voltage spikes, and prevents theseself-induced spikes from reaching and damaging the BOD device. As justdescribed, the circuit pictured in FIG. 19 protects the equipmentagainst positive voltages in excess of +2000V. There is also a similarcircuit (not shown) provided in the opposite direction between the sametwo nodes 67 and 68 to protect the equipment from voltages that are morenegative than −2000V.

The variation in the forward breakover voltage as a function oftemperature changes is a major problem because margin needs to beprovided in the capability of the other parts of the circuit (such asthe thyristor), and in the equipment being protected, to account for thechanges in the breakover voltage of the BOD device. When temperatureincreases, the equipment and thyristor still need to be able to toleratethe higher voltage that may be present (due to the breakover voltage ofthe BOD device increasing). The less than one percent change in forwardbreakover voltage per ten degrees Celsius (see line 66 of FIG. 17) canresult in major cost savings in the overall system as compared to thetwo percent change in forward breakover voltage per ten degrees Celsiusof the prior art bulk BOD of FIG. 4.

FIG. 20 is a table that shows various aspects of the composition of theBOD device of FIG. 7.

FIG. 21 is a table that shows how reducing the cathode short regionwidth results in reduced triggering currents.

FIG. 22 is a cross-sectional diagram of a BOD device 100 havingcomparable forward breakover and reverse breakdown voltages inaccordance with one novel aspect. BOD device 100 has a forward breakovervoltage of +450 volts and a reverse breakdown voltage of −500 volts. Thevoltages are comparable in the sense that the absolute magnitude of thereverse breakdown voltage is slightly greater than the forward breakovervoltage. A metal anode electrode 101 is disposed on the bottom surfaceof a layer of P type substrate semiconductor material 102. An N− typebase layer 103 of substrate semiconductor material is disposed on the Ptype substrate layer 102. The N− type base layer can be formed bydiffusing N type dopants down into the P type substrate material fromthe upper semiconductor surface. The N− type base layer 103 extends upto an upper semiconductor surface 104 of the die structure. The bottomsemiconductor surface of the die structure is identified by referencenumeral 105. In the illustrated example, the two surfaces 104 and 105are substantially planar.

A P type base region 106 extends down into the N− type base layer 103from the upper semiconductor surface 104. An N+ type annular emitterregion 107 extends down into the P type base region 106 from the uppersemiconductor surface 104 as shown. Region 107 is annular in that it hasa ring-shape when considered from the top-down perspective. An amount ofthe P type material of the P type base region 106 in the center of thering extends up so that the P type material reaches the uppersemiconductor surface 104. This amount of P type material is referred toas the cathode short region 108. A metal cathode electrode 109 isdisposed on the upper semiconductor surface 104 so that it makes contactwith the N+ type annular emitter region 107 and with the cathode shortregion 108 at the upper semiconductor surface 104 as shown. An optionalfloating metal ring 110 is disposed on the upper surface of the P typebase region 106 so that the floating metal ring 110 surrounds, but doesnot touch, the metal cathode electrode 109. This structure of the upperportion of the BOD of FIG. 22 is similar to the structure of the upperportion of the BOD of FIG. 7, except that in the case of the BOD of FIG.22 a peripheral P type isolation diffusion region 111 is provided. Theperipheral P type isolation diffusion region 111 extends from the uppersemiconductor surface 104 all the way through the die structure to thebottom semiconductor surface 105. The peripheral P type isolationdiffusion region reaches the side edges of the die as shown. Theperipheral P type isolation diffusion region is formed by implanting anddiffusing P type dopants into the structure from the upper semiconductorsurface 104, and by implanting and diffusing P type dopants into thestructure from the bottom semiconductor surface 105, so that the twodoped regions meet. As in the case of the BOD of FIG. 7, two P+ typeguard rings 112 and 113 are provided and an N+ type channel stopper 114is provided as well.

FIG. 23 is a side view of a packaged BOD device 115. A BOD die of thetype illustrated in FIG. 22 is enclosed in the plastic housing portion116 of the package of FIG. 23. The anode metal electrode 101 of the BODdie is coupled to metal package terminal PT2 117. The cathode metalelectrode 109 of the BOD die is coupled to metal package terminal PT1118.

FIG. 24 is a schematic diagram of the packaged BOD device 115 of FIG.23. The connections 119 and 120 are internal to the package. The BODdevice is a N-P-N-P layered device, where the top N type layer is the N+type annular emitter region, where the next P type layer is the P typebase region 106, where the next N type layer is the N− type base layer103, and where the last P type layer is the P type substrate layer 102.The BOD die 100 does not actually include a reverse diode separate fromthe BOD diode, but rather the symbols of FIG. 24 indicate afunctionality of the device. The reverse diode function is performed bythe PN junction of the J1 junction between P type substrate 102 and N−type base layer 103.

FIG. 25 is a top-down diagram of the BOD die 100 of FIG. 22. As in thecase of the BOD die of FIG. 10 described above, the periphery of P typebase region 106 (when considered from the top-down perspective) has aminimum radius of curvature R, where R is at least twice the depth D ofthe N− type base layer 103, and is preferably four times the depth D ofthe N− type base layer 103.

FIG. 26 is a diagram of the bottom surface of the BOD die 100 of FIG.22. Substantially the entire bottom surface of the BOD die is covered inmetal of the metal anode electrode 101.

FIG. 27 is a cross-sectional diagram of the BOD device 100 under areverse voltage of −300 volts (the anode is −300 volts with respect tothe cathode). The BOD device 100 successfully blocks this −300 voltreverse voltage. The depletion region extends from the J1 PN junctioninto the N− base layer 103. The depletion region also extends from theJ1 PN junction into the P type substrate layer 102 and into the P typeisolation diffusion region 111. Whereas the reverse breakdown voltage ofthe BOD device of FIG. 19 is about −200 volts, the reverse breakdownvoltage of the BOD device of FIG. 22 is about −500 volts. The absolutemagnitude of the reverse breakdown voltage (−500 volts) is higher thanthe forward breakover voltage (+450 volts) because in the forward biasdirection the base region 106 has a cylindrical junction. In the forwardbias direction, without the guard rings, the device would break down atabout +100 volts. By adding the guard rings the breakdown voltage (−450volts) in the forward bias direction is increased to about 85% of thebreakdown voltage of the bulk silicon. In the reverse direction, thereis no cylindrical junction. The absolute magnitude of the reversebreakdown voltage of the BOD device (−500 volts) is approximately thesame as the bulk breakdown voltage of bulk silicon. Without the P typeisolation region, the reverse breakdown voltage would be approximately−50 volts to −100 volts.

FIG. 28 is a cross-sectional diagram of the BOD device 100 under areverse voltage of −450 volts. The BOD device 100 successfully blocksthe −450 volt reverse voltage. The depletion region extends from the J1PN junction farther into the N− base layer 103 and farther into the Ptype substrate layer 102 and the P type isolation diffusion region 111.

FIG. 29 is a waveform diagram showing the voltage across packaged BODdevice 115 of FIG. 23 when the BOD device is put into the test circuitof FIG. 12. The BOD device 115 of FIG. 23 has a reverse breakdownvoltage of about −500 volts. The dashed line 121 in FIG. 29 shows thevoltage across the BOD device in a test. Solid line 122 shows thecurrent flowing through the BOD device. Avalanche current increases,until the magnitude of the avalanche current reaches the triggeringcurrent at the +450 volt forward breakover voltage V_((BO)F). Theforward breakover voltage V_((BO)F) is reached at 0.1 microseconds. Thebreakover diode then breaks over, and begins to conduct current. Thevoltage across the BOD device drops, and the current increases. Thevoltage across the BOD device reaches zero at time 0.55 microseconds.The turn on time T_(ON) is the time from when the avalanche currentreaches the triggering current until the time when the voltage acrossthe BOD device has decreased to zero. The turn on time T_(ON) istherefore 0.45 microseconds.

FIG. 30 is a diagram that shows the V-I characteristic of the BOD deviceof FIG. 22. In a simplified explanation, as the forward voltage (thevoltage from terminal T2 to terminal T1) increases, the current remainsvery close to zero and the BOD device is in the forward blocking mode.When the voltage reaches the forward breakover voltage V_((BO)F) of +450volts, then breakover occurs and the BOD device turns on. The voltageacross the BOD device therefore falls quickly to a low voltage V_(H).Once the BOD device is on, an increase in the voltage across the BODdevice results in a rapid increase in current. The BOD device iseffectively a short. The BOD device will remain in this forwardconductive mode unless the current flow through the BOD device fallsbelow the holding current I_(H).

Unlike the BOD device of FIG. 7, the BOD device of FIG. 22 is able totolerate reverse voltages up to −500 volts. If the reverse voltageexceeds this −500 volt value, then the BOD device undergoes breakdownand a reverse current flows. This is the “reverse avalanche region”labeled on the diagram. The reverse breakdown voltage (also sometimescalled the “reverse breakover voltage”) of the BOD device is −500 volts,which is slightly larger in absolute magnitude than the +450 voltforward breakover voltage. Using the architecture of the BOD device ofFIG. 22, the reverse breakdown voltage is made to be a little larger inabsolute magnitude than the forward breakover voltage, and the forwardbreakover voltage can be made to be anywhere in a range from +200V togreater than +900V.

FIG. 31 is a table that shows the composition of the various parts ofthe BOD device of FIG. 22. In this example, as indicated in the graph ofFIG. 30, the BOD device 100 of FIG. 22 has a forward breakover voltageof +450 volts, and a reverse breakdown voltage of −500 volts.

FIG. 32 is a side view of a packaged overvoltage protection circuit 123in accordance with another embodiment. The packaged device 123 includesa housing portion 124, a PT2 package terminal 125, and a PT1 packageterminal 126. A plurality of BOD dice of the type illustrated in FIG.22, along with other components, are enclosed in the housing portion124.

FIG. 33 is a circuit diagram of an apparatus and circuit 136. Apparatusand circuit 136 involves the packaged device 123 of FIG. 32 in use incombination with a thyristor 127. The apparatus and circuit 136 includesa current limiting resistor 128, the packaged device 123, and a RCsnubber circuit 129, 130. Operation of the circuit of FIG. 33 is similarto the operation of the circuit of FIG. 19 described above. The packagedovervoltage protection circuit 123 functions similar to a single BODdevice that has a forward breakover voltage of +8000 volts, and areverse breakdown voltage of −10,000 volts. The contents of the packageddevice 123 is shown encircled in the dashed line 123. Within packageddevice 123 there are four identical dice 131-134 of the type of FIG. 22,with these dice being coupled in series between package terminal PT2 andpackage terminal PT1. If the forward voltage drop between PT2 and PT1reaches the forward breakover voltage of +8000 volts, then the BODdevices undergo breakover and a breakover current flows through the BODdevices in current path 135 from PT2 to PT1. But for a small leakagecurrent that flows through the resistor string 136-139, the packageddevice 123 blocks substantially all current flow for positive voltagesbetween PT2 and PT1 unless the forward voltage reaches or exceeds +8000volts. The triggering current of the BOD device may, for example, be 10mA and this current only flows at high forward voltages approachingV_((BO)F). In the reverse direction, each of the BOD devices canwithstand a reverse voltage of −500 volts before suffering breakdown.Accordingly, other than for a small leakage current that flows throughthe resistor string 136-139 and a small triggering current, the packageddevice 123 blocks current flow for negative voltages between PT2 and PT1unless the negative voltage reaches or exceeds −10,000 volts. Theresistances of the resistors is made large so that the current flowthrough the resistor string is inconsequential.

In operation, if the voltage between node 140 and 141 reaches +8000volts, then the BOD devices in packaged device 123 undergo breakover,and a current flows from PT2 to PT1 and this current is injected intothe gate of thyristor 127, thereby turning on the thyristor. As aconsequence of the thyristor turning on, the thyristor conducts a largecurrent from node 140 to node 141 through the thyristor, and this largecurrent reduces the voltage between nodes 140 and 141 to a voltage belowthe +8000 volts. Equipment 142 that is not to experience voltages inexcess of +8000 volts is connected across the nodes 140 and 141, so thatthe circuit of FIG. 33 will prevent the voltage between those nodes fromexceeding +8000 volts. As explained above in connection with FIG. 19,resistor 128 has a current limiting function in limiting the magnitudeof the triggering current sent into the gate of the thyristor. Thesnubber 129, 130 protects the BOD devices from potentially harmfulvoltage spikes that the thyristor itself generates between the gate andcathode of the thyristor. The thyristor may generate such spikes when itturn on and/or off rapidly. Due the ability of each BOD device to blocka reverse voltage of −500 volts, the circuit of FIG. 33 does not includean expensive reverse diode such as reverse diode 71 of FIG. 19. Asexplained above in connection with FIG. 19, there is typically anothercircuit identical to the circuit of FIG. 33 where this other circuit iscoupled in antiparallel fashion to nodes 140 and 141. The first circuitis to stop positive voltages more positive than +8000 volts fromappearing between nodes 140 and 141, whereas the second circuit is tostop negative voltages more negative than −8000 volts from appearingbetween nodes 140 and 141. Equipment to be protected 142 in this case isnot to see voltages whose absolute magnitudes are greater than 8000volts. Although an embodiment is shown in which a resistor is coupled inparallel with each individual BOD device, some BOD devices may not havesuch a parallel-connected resistor in some embodiments. Although anembodiment is shown in which all the BOD devices are identical, inanother embodiments BOD devices that have different forward breakovervoltages are provided in the same packaged overvoltage protectioncircuit to provide a desired different overall forward breakover voltageand a desired different overall reverse breakdown voltage of the overallpackaged overvoltage protection circuit.

Although certain specific embodiments are described above forinstructional purposes, the teachings of this patent document havegeneral applicability and are not limited to the specific embodimentsdescribed above. Accordingly, various modifications, adaptations, andcombinations of various features of the described embodiments can bepracticed without departing from the scope of the invention as set forthin the claims.

What is claimed is:
 1. A breakover diode device comprising: a P typelayer of substrate semiconductor material, wherein a bottom surface ofthe P type layer of substrate semiconductor material is a bottomsemiconductor surface; an anode metal electrode disposed on the bottomsemiconductor surface; an N− type base layer disposed on the P typelayer; a P type base region that extends from an upper semiconductorsurface down into the N− type base layer; an N+ type annular emitterregion that extends down from the upper semiconductor surface down intothe P type base region, wherein P type semiconductor material of the Ptype base region extends up to the semiconductor surface and defines acathode short region of P type semiconductor material that is laterallysurrounded at the semiconductor surface by the N+ type annular emitterregion; a P type isolation diffusion region that extends from the uppersemiconductor surface to the bottom semiconductor surface, wherein the Ptype isolation diffusion region surrounds the N− type base layer in thelateral dimension, and wherein the P type isolation diffusion contactseach of four side edges of a breakover diode device; and a cathode metalelectrode disposed over part of the annular N+ type emitter and over thecathode short region at the upper semiconductor surface, wherein thebreakover diode device has a forward breakover voltage (V(BO)F) greaterthan four hundred volts, and wherein the breakover diode device is ableto withstand a reverse voltage in excess of the forward breakovervoltage without suffering breakdown.
 2. The breakover diode device ofclaim 1, wherein the forward breakover voltage varies as a function oftemperature by less than one percent per ten degrees Celsius in anoperating temperature range from fifteen degrees Celsius to thirty-fivedegrees Celsius.
 3. The breakover diode device of claim 1, wherein theN− type base layer is a layer of substrate semiconductor material. 4.The breakover diode device of claim 1, wherein the upper semiconductorsurface is a substantially planar surface that extends to each of thefour side edges, wherein the bottom semiconductor surface is asubstantially planar surface that extends to each of the four sideedges, and wherein the cathode metal electrode extends oversubstantially all of the bottom semiconductor surface.
 5. The breakoverdiode device of claim 1, further comprising: a floating metal ringdisposed on the P type base region, wherein the floating metal ringsurrounds the cathode metal electrode, wherein the floating metal ringdoes not contact any part of the N+ type annular emitter region, andwherein the floating metal ring does not contact any part of the N− typebase layer.
 6. The breakover diode device of claim 1, wherein a PNjunction exists between the P type layer of substrate semiconductormaterial and the N− type base layer, and wherein the PN junction has areverse breakdown voltage that has an absolute magnitude greater than400 volts.
 7. A breakover diode device, comprising: a first metalelectrode; a second metal electrode; and means for blockingsubstantially all current flow from the second metal electrode to thefirst metal electrode for forward blocking voltages between the secondmetal electrode and the first metal electrode that are less than aforward breakover voltage, and for breaking over and conducting abreakover current from the second metal electrode to the first metalelectrode for a voltage between the second metal electrode and the firstmetal electrode that equals the forward breakover voltage, and forblocking current flow from the first metal electrode to the second metalelectrode for reverse blocking voltages between the second metalelectrode and the first metal electrode that are negative but that arenot more negative than a reverse breakdown voltage of the breakoverdiode device, wherein the forward breakover voltage is greater than fourhundred volts, and wherein the absolute magnitude of the reversebreakdown voltage is greater than the forward breakover voltage, andwherein the means comprises a P type isolation diffusion region thatextends from an upper semiconductor surface to a bottom semiconductorsurface of the breakover diode device.
 8. The breakover diode device ofclaim 7, wherein the means comprises a breakover diode that has a firstPN junction, a second PN junction, and a third PN junction, wherein saidbreakover current flows in a current path from the second metalelectrode, across the first PN junction, across the second PN junction,across the third PN junction, and to the first metal electrode.
 9. Thebreakover diode device of claim 8, wherein the means is a semiconductordie that includes said breakover diode, wherein the semiconductor diehas the upper semiconductor surface, the bottom semiconductor surface,and four side edges, and wherein the P type isolation diffusion regionextends to each of the four side edges of the semiconductor die.
 10. Thebreakover diode device of claim 9, wherein the first PN junction has areverse breakdown voltage that has an absolute magnitude greater thanfour hundred volts.
 11. The breakover diode device of claim 10, whereinthe first PN junction is between a layer of P type semiconductorsubstrate material and a layer of N type semiconductor substratematerial.
 12. The breakover diode device of claim 10, wherein the meansfurther comprises first P+ guard ring, a second P+ guard ring thatsurrounds the first P+ guard ring, and a N+ channel stopper thatsurrounds the first and second P+ guard rings.
 13. The breakover diodedevice of claim 7, wherein the breakover diode device is able towithstand a reverse voltage in excess of four hundred volts withoutsuffering breakdown.
 14. The breakover diode device of claim 7, whereinthe forward breakover voltage varies as a function of temperature byless than one percent per ten degrees Celsius in an operatingtemperature range from fifteen degrees Celsius to thirty-five degreesCelsius.
 15. A method of manufacture comprising: (a) forming an N− typebase layer on a P type layer of substrate semiconductor material,wherein a bottom surface of the P type layer is a bottom semiconductorsurface, wherein the N− type layer extends up to an upper semiconductorsurface; (b) forming a P type base region into the N− type base layer,wherein the P type base region extends down into the N− type layer fromthe upper semiconductor surface; (c) forming an N+ type annular emitterregion that extends down into the P type base region from the uppersemiconductor surface, wherein the N+ type annular emitter regionsurrounds a cathode short region of the P type base region at the uppersemiconductor surface, wherein the cathode short region extends up tothe upper semiconductor surface; (d) forming a cathode metal electrodeon the upper semiconductor surface so that the cathode metal electrodecontacts the N+ type annular emitter region and the cathode shortregion; (e) forming a P type isolation diffusion region that extendsfrom the upper semiconductor surface to the bottom semiconductorsurface, wherein the P type isolation diffusion region surrounds the N−type base layer in a lateral dimension; and (f) forming an anode metalelectrode on the bottom semiconductor surface, wherein the anode metalelectrode contacts the P type isolation diffusion region, wherein (a)through (f) are steps in the manufacture of a breakover diode die,wherein the P type isolation diffusion region contacts each of four sideedges of the breakover diode die, wherein the breakover diode die has aforward breakover voltage greater than four hundred volts, and whereinthe breakover diode die has a reverse breakdown voltage whose absolutemagnitude exceeds four hundred volts.
 16. The method of manufacture ofclaim 15, further comprising: (g) packaging the breakover diode die in apackage, wherein the package has a first package terminal, a secondpackage terminal, and a housing that contains the breakover diode die.17. The method of manufacture of claim 15, wherein the breakover diodedie is a part of a wafer, wherein the cathode short region of thebreakover diode die has a first width, the method further comprising:(h) forming a second breakover diode die on the wafer along with thebreakover diode die formed in steps (a) through (f), wherein the secondbreakover diode die is of identical construction to the breakover diodedie formed in steps (a) through (f) except that the second breakoverdiode of the second breakover diode die has a second cathode shortregion width, wherein the first and second cathode region widths aredifferent.
 18. The method of manufacture of claim 15, furthercomprising: (g) forming a P+ type guard ring that surrounds the P typebase region at the upper semiconductor surface, wherein the P typeisolation diffusion region surrounds the P+ type guard ring.
 19. Themethod of manufacture of claim 18, further comprising: (h) forming an N+type channel stopper ring that surrounds the P+ type guard ring at theupper semiconductor surface, wherein the P type isolation diffusionregion surrounds the N+ type channel stopper ring.
 20. The method ofmanufacture of claim 15, wherein the forward breakover voltage varies asa function of temperature by less than one percent per ten degreesCelsius in an operating temperature range from fifteen degrees Celsiusto thirty-five degrees Celsius.